| PART |
Description |
Maker |
| HAT2035R HAT2035R-EL-E |
0.5 A, 150 V, 5.5 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Silicon N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| PROG-MOD |
PROG OSC MODULE PROG振荡器模
|
SIEMENS AG
|
| 8041-OZZDFNL 8041-BZZDFNL 8041-KZZDFNL 8041-AZZDFN |
CABLE CAT5 FTP BLUE 100M
Prog Solid-State Temp Sensor, -40C to 85C, 8-PDIP, TUBE
Prog Solid-State Temp Sensor, -40C to 125C, 8-PDIP, TUBE 5类电00米黄色的FTP
CABLE CAT5 FTP 100M 100米的FTP电缆双绞
|
Microsemi, Corp.
3M Company
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| APT8030B2VFR_05 APT8030B2VFR APT8030B2VFR05 APT803 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
27 A, 800 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
MICROSEMI POWER PRODUCTS GROUP
|
| IRU3004 IRU3004CF IRU3004CW IRU3004CWTR IRU3004CFT |
5-BIT PROGRAMMABLE SYNCHRONOUS BUCK CONTROLLER IC WITH DUAL LDO CONTROLLER 5位可编程同步降压控制器IC具有双LDO控制
5 Bit Prog SynchBuck CIC with Dual Adj Output LDO in a 20-Pin SOIC(WB) package
5 Bit Prog SynchBuck CIC with Dual Adj Output LDO in a 20-Pin TSSOP package
|
International Rectifier, Corp.
http://
IRF[International Rectifier]
|
| 100EL16M8 100EL16 100EL16M 100EL16MX |
CX-PROG V1.2 W/DOC,W/ 1YR.SMP RoHS Compliant: NA
5V ECL Differential Receiver
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| APT5014BLL APT5014SLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS 电源MOS 7TM是一个低损耗，高电压，N沟道增强模式的新一代功率MOSFET
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS 7 500V 35A 0.140 Ohm
|
Advanced Power Technology, Ltd.
|
| BSP170P Q67041-S4018 |
SIPMOS Power Transistor (P-Channel Enhancement mode Avalanche rated dv/dt rated) 1.9 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET
High Speed CMOS 8-Channel Analog Multiplexer/Demultiplexer 16-SOIC -55 to 125
SIPMOS ? Power Transistor
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| GT15Q301 |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
Silicon N-Channel IGBT for High Power Switching Application(用于大功率转换的N沟道绝缘栅双极型晶体
|
http://
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| RJJ0315DPA RJJ0315DPA-00-J53 |
Silicon P Channel Power MOS FET High Speed Power Switching
35 A, 30 V, 0.01 ohm, P-CHANNEL, Si, POWER, MOSFET HALOGEN FREE AND LEAD FREE, WPAK(2), 8 PIN
|
Renesas Electronics Corporation
|
